RSS110N03 transistor 1/3 switching (30v, 11a) RSS110N03 ! ! ! ! features 1) low on-resistance. 2) built-in g-s protection diode. 3) small and surface mount package (sop8). ! applications power switching, dc/dc converter. ! ! ! ! external dimensions (units : mm) each lead has same dimensions sop8 (1)source (2)source (3)source (4)gate (5)drain (6)drain (7)drain (8)drain 5.0 0.2 0.2 0.1 6.0 0.3 3.9 0.15 0.5 0.1 ( 1 ) ( 4 ) ( 8 ) ( 5 ) max.1.75 1.27 0.15 0.4 0.1 1.5 0.1 0.1 ! ! ! ! structure ? silicon n-channel mos fet ! ! ! ! equivalent circuit ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. (1)source (2)source (3)source (4)gate (5)drain (6)drain (7)drain (8)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (6) (5) (1) (2) (3) (4) (1) (2) (3) (4) (8) (7) (6) (5) ! ! ! ! absolute maximum ratings (ta=25 c) ? ? parameter v v dss symbol 30 v v gss 20 a i d 11 a i dp 44 a i s 1.6 a i sp 6.4 w p d 2 c tch 150 c tstg ? 55~ + 150 limits unit drain-source voltage gate-source voltage drain current total power dissipatino (t c = 25 c) channel temperature strage temperature continuous pulsed continuous source current (body diode) pulsed ? 1 pw 10 s, duty cycle 1%
RSS110N03 transistor 2/3 ! ! ! ! thermal resistance (ta=25 c) c / w rth (ch-a) 62.5 parameter symbol limits unit channel to ambient ! ! ! ! electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 10 av gs =20v, v ds =0v v dd 15v typ. max. unit conditions gate-source leakage v (br) dss 30 ?? vi d =1ma, v gs =0v drain-source breakdown voltage i dss ?? 10 av ds =30v, v gs =0v zero gate voltage drain current v gs (th) 1.0 ? 2.5 v v ds =10v, i d =1ma gate threshold voltage ? static drain-source on-starte resistance r ds (on) ? m ? forward transfer admittance ? input capacitance ?? s output capacitance c iss ?? pf v ds =10v reverse transfer capacitance c oss ?? pf v gs =0v tum-on delay time c rss ?? pf f=1mhz v gs =10v r gs =10 ? rise time t d (on) ?? ns tum-off delay time t r ?? ns fall time t d (off) ?? ns total gate charge t f ?? ns gate-source charge q g ?? nc gate-drain charge q gs ?? nc v gs =5v q gd ?? nc ? pulsed ? ? ? ? ? ? ? ? ? ? ? 7.6 10.4 i d = 11a, v gs =10v 10.3 14.3 i d = 11a, v gs =4.5v 11.2 15.5 i d = 11a, v gs =4v 8.0 i d = 11a, v ds =10v 1300 410 250 9 r l =2.73 ? 17 60 30 17 3.3 7.1 i d = 11a i d =5.5a, v dd 15v ! ! ! ! body diode characteristics (source-drain characteristics) (ta=25 c) forward voltage v sd ?? 1.2 v i s =6.4a, v gs =0v parameter symbol min. typ. max. unit conditions ? pulsed ? ! ! ! ! electrical characteristic curves 0.01 0.1 1 10 100 drain-source voltage : v ds (v) 10 capacitance : c (pf) 1000 10000 100 ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 0.01 0.1 1 10 100 drain current : i d (a) 1 10 switching time : t (ns) 1000 10000 100 ta = 25 c v dd = 15v v gs = 10v r g = 10 ? pulsed fig.2 switching characteristics t r t f t d (off) t d (on) 024681012141618 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 gate-source voltage : v gs (v) ta = 25 c v dd = 15v i d = 11a r g = 10 ? pulsed fig.3 dynamic input characteristics
RSS110N03 transistor 3/3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 gate-source voltage : v gs (v) 100 10 1 0.1 0.01 0.001 drain current : i d (a) fig.4 typical transfer characteristics ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v ds = 10v pulsed 0246810121416 gate-source voltage : v gs (v) 0 50 100 150 200 250 300 static drain-source on-state resistance : r ds (on) (m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 11a i d = 5.5a 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) 0.01 0.1 1 10 100 source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.1 1 10 100 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) (m ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 10v pulsed 0.1 1 10 100 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4.5v pulsed drain current : i d (a) static drain-source on-state resistance : r ds (on) (m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) 0.1 1 10 100 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4v pulsed drain current : i d (a) static drain-source on-state resistance : r ds (on) (m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? )
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